| Lec # | TOPICS | READINGS |
|---|---|---|
| 1 | Introduction to 6.774 CMOS Process Flow | Chapters 1 and 2 |
| 2 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers | Chapter 3 |
| 3 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) Wafer Cleaning and Gettering | Chapter 3 and start chapter 4 |
| 4 | Wafer Cleaning and Gettering (cont.) | Chapter 4 |
| 5 | Wafer Cleaning and Gettering - Contamination Measurement Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques | Chapter 4 and start chapter 6 |
| 6 | Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models | Chapter 6 |
| 7 | Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects | Chapter 6 |
| 8 | Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic | Chapter 7 |
| 9 | Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects | Chapter 7 |
| 10 | Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion | Chapter 7 |
| 11 | Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques | Chapter 7 |
| 12 | Ion Implantation and Annealing - Analytic Models and Monte Carlo | Chapter 8 |
| 13 | Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED | Chapter 8 |
| 14 | Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction | Chapter 8 |
| 15 | Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail | Chapter 8 |
| 16 | The SUPREM IV Process Simulator | |
| 17 | Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth | Chapter 9 |
| 18 | Thin Film Deposition and Epitaxy - CVD Examples and PVD | Chapter 9 |
| 19 | Thin Film Deposition and Epitaxy - Modeling Topography of Deposition | Chapter 9 |
| 20 | Etching - Introduction | Chapter 10 |
| 21 | Etching - Poly Gate Etching, Stringers, Modeling of Etching | Chapter 10 |
| 22 | Silicides, Device Contacts, Novel Gate Materials | Chapter 11 |
| 23 | Growth and Processing of Strained Si/SiGe and Stress Effects on Devices | |
| 24-26 | Report Presentations |
Table of Contents
Study Materials
Readings
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This section contains readings that were used during the course. The book by Plummer, Deal and Griffin is the only required text but the other reading material is useful for obtaining a better understanding of the course topics. The readings for each session from the required textbook are listed below in the table.
Wherever possible, the book citations below reflect the specific editions used in the course.
Texts
Plummer, James, Michael Deal, and Peter Griffin. Silicon VLSI Technology: Fundamentals, Practice and Modeling. Upper Saddle River, NJ: Prentice Hall, 2000. ISBN: 0130850373.
Wolf, Stanley, and Richard Tauber. Silicon Processing for the VLSI Era . 2nd ed. Sunset Beach, CA: Lattice Press, 1999. ISBN: 0961672161.
Sze, Simon. VLSI Technology. 2nd ed. New York, NY: McGraw-Hill, 1988. ISBN: 0070627355.
Campbell, Stephen. The Science and Engineering of Microelectronic Fabrication. 2nd ed. New York, NY: Oxford University Press, 2001. ISBN: 0195136055.
Vossen, John, and Werner Kern, eds. Thin Film Processes. Burlington, MA: Academic Press, 1978. ISBN: 0127282505.
Vossen, John, and Werner Kern. Thin Film Processes. Burlington, MA: Academic Press, 1991. ISBN: 0127282513.
Mayer, James W., and Sylvanus S. Lau. Electronic Materials Science: For Integrated Circuits in Si and GaAs. New York, NY: Macmillan, 1990. ISBN: 0023781408.
Pierret, Robert, and George W. Neudeck. Modular Series on Solid State Devices. Vol. 1-5. Upper Saddle River, NJ: Prentice Hall, 1987, 89, and 90. ISBN: 0201122979.
Pierret, Robert. Advanced Semiconductor Fundamentals. Upper Saddle River, NJ: Prentice Hall, 2003. ISBN: 013061792X.
Taur, Yuan, and Tak H. Ning. Fundamentals of Modern VLSI Devices. Cambridge, UK: Cambridge University Press, 1998. ISBN: 0521559596.
Journals/Conference Proceedings
IEEE Transactions on Electron Devices (published monthly)
Applied Physics Letters
Journal of Applied Physics
IEEE IEDM Conference Proceedings (published each December)