| Lec # | TOPICS | AUDIO |
|---|---|---|
| 1 | Introduction to 6.774 CMOS Process Flow | |
| 2 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers | |
| 3 | Crystal Growth, Wafer Fabrication, and Basic Properties of Si Wafers (cont.) Wafer Cleaning and Gettering | (RM - 16K) |
| 4 | Wafer Cleaning and Gettering (cont.) | (RM - 16K) |
| 5 | Wafer Cleaning and Gettering - Contamination Measurement Techniques Oxidation and the Si/SiO2 Interface - Uses of Oxides and CV Measurement Techniques | (RM - 16K) |
| 6 | Oxidation and the Si/SiO2 Interface: Deal/Grove Model, Thin Oxide Models | (RM - 16K) |
| 7 | Oxidation and the Si/SiO2 Interface: 2D Effects, Doping Effects, Point Defects | (RM - 16K) |
| 8 | Dopant Diffusion - Need for Abrupt Profiles, Fick's Laws, Simple Analytic | (RM - 16K) |
| 9 | Dopant Diffusion - Numerical Techniques in Diffusion, E Field Effects | (RM - 16K) |
| 10 | Dopant Diffusion - Fermi Level Effects, I and V Assisted Diffusion | (RM - 16K) |
| 11 | Dopant Diffusion - Review Atomic Scale Models, Profile Measurement Techniques | (RM - 16K) |
| 12 | Ion Implantation and Annealing - Analytic Models and Monte Carlo | (RM - 16K) |
| 13 | Ion Implantation and Annealing - Physics of E Loss, Damage, Introduction to TED | (RM - 16K) |
| 14 | Transient Enhanced Diffusion (TED) - +1 Model, (311) Defects and TED Introduction | (RM - 16K) |
| 15 | Transient Enhanced Diffusion (TED) - Simulation Examples, TED Calculations, RSCE in detail | (RM - 16K) |
| 16 | The SUPREM IV Process Simulator | (RM - 16K) |
| 17 | Thin Film Deposition and Epitaxy - Introduction to CVD, Si Epitaxial Growth | (RM - 16K) |
| 18 | Thin Film Deposition and Epitaxy - CVD Examples and PVD | (RM - 16K) |
| 19 | Thin Film Deposition and Epitaxy - Modeling Topography of Deposition | (RM - 16K) |
| 20 | Etching - Introduction | (RM - 16K) |
| 21 | Etching - Poly Gate Etching, Stringers, Modeling of Etching | (RM - 16K) |
| 22 | Silicides, Device Contacts, Novel Gate Materials | (RM - 16K) |
| 23 | Growth and Processing of Strained Si/SiGe and Stress Effects on Devices | (RM - 16K) |
| 24-26 | Report Presentations |